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| SMD Type Silicon N-Channel MOSFET 2SK3065 SOT-89 4.50 +0.1 -0.1 MOSFET Unit: mm 1.50 +0.1 -0.1 Features Low on resistance. High-speed switching. Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). Driving circuit is easy. Easy to use parallel. +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 It is strong to an electrostatic discharge. 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% TC=25 Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 20 2 8 0.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS VGS(th) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=1A,VGS(on)=4V,RL=30 ,VDD=30V,RG=10 VDS=10V,VGS=0,f=1MHZ Testconditons ID=1mA,VGS=0 VDS=60V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=1A VGS=4V,ID=1A VGS=2.5V,ID=1A 0.8 1.5 0.25 0.35 160 85 25 20 50 120 70 0.32 0.45 pF pF pF ns ns ns ns Min 60 10 10 1.5 Typ Max Unit V A A V S Marking Marking KE www.kexin.com.cn 1 |
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